RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Compare
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB
Overall score
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Overall score
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Report a bug
Reasons to consider
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
42
Around -27% lower latency
Faster reading speed, GB/s
16.9
13.3
Average value in the tests
Faster write speed, GB/s
10.4
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
42
33
Read speed, GB/s
13.3
16.9
Write speed, GB/s
7.8
10.4
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2181
3035
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-004.A00LF 4GB
Transcend Information JM2666HSE-16G 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMR16GX4M2K4266C19 8GB
Samsung M471B5273DH0-CH9 4GB
DSL Memory D4SS1G082SH21A-B 16GB
Kingston 9905471-006.A00LF 4GB
Avant Technology W642GU42J5213N2 16GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK8GX4M1D3000C16 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CM4X16GC3000C15D4 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]205F 8GB
Kingston KHX1866C9D3/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMW128GX4M8C3000C16 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Kingston KF552C40-16 16GB
Kingston 99U5743-031.A00G 16GB
Report a bug
×
Bug description
Source link