RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Compare
Samsung 1600 CL10 Series 8GB vs A-DATA Technology AM2P24HC8T1-BUSS 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
31
Around 19% lower latency
Faster reading speed, GB/s
16.1
15.5
Average value in the tests
Faster write speed, GB/s
10.1
9.7
Average value in the tests
Reasons to consider
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
31
Read speed, GB/s
16.1
15.5
Write speed, GB/s
10.1
9.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2464
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMW64GX4M2D3600C18 32GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2133C15-4GIS 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M393B5270CH0-CH9 4GB
Maxsun MSD44G24Q0 4GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Samsung M471A1K43DB1-CWE 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston CAC24D4S7D8MB-16 16GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C15-4GVK 4GB
Kingston KVR533D2N4 512MB
Corsair CM4X32GC3200C16K2E 32GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Report a bug
×
Bug description
Source link