RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
59
Around 58% lower latency
Faster write speed, GB/s
10.1
9.7
Average value in the tests
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
16.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
59
Read speed, GB/s
16.1
17.2
Write speed, GB/s
10.1
9.7
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2764
2181
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905625-139.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMK32GX4M2D3600C16 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Team Group Inc. DDR4 3000 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMSX64GX4M2A3200C22 32GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMU32GX4M2A2666C16 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905678-005.A00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Kingston 9905403-500.A01LF 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Avant Technology F641GU67F9333G 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT32G4DFD8266.C16FE 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C14-8GTZN 8GB
Report a bug
×
Bug description
Source link