RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
59
Around 58% lower latency
Faster write speed, GB/s
10.1
9.7
Average value in the tests
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
16.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
59
Read speed, GB/s
16.1
17.2
Write speed, GB/s
10.1
9.7
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2764
2181
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Kingston 9905403-061.A00LF 2GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3200C16-8GVRB 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A5143EB1-CPB 4GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMT64GX4M4K3600C18 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHYXPX-HYJ 8GB
Corsair CMK32GX5M2B5600C36 16GB
Essencore Limited KD48GU880-36A180U 8GB
Samsung M471B5273DH0-CH9 4GB
Kllisre D4 8G 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Apacer Technology 76.D105G.D090B 16GB
Strontium EVMT8G1600U86S 8GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-32GVK 32GB
Samsung M395T2863QZ4-CF76 1GB
Kingston HP32D4U8S8HD-8X 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Report a bug
×
Bug description
Source link