RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Report a bug
Below the latency in the PassMark tests, ns
30
43
Around -43% lower latency
Faster reading speed, GB/s
17.6
14.9
Average value in the tests
Faster write speed, GB/s
13.9
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
30
Read speed, GB/s
14.9
17.6
Write speed, GB/s
9.6
13.9
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2506
3473
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Team Group Inc. 16GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A2K43CB1-CRCR 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Essencore Limited IM48GU88N21-FFFHM 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Kingston 99U5474-038.A00LF 4GB
Nanya Technology M471A5143EB1-CRC 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
Team Group Inc. UD5-6400 16GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9905702-071.A00G 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3466C19D4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Samsung M471B5273DH0-CH9 4GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905630-052.A00G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Corsair CMSX32GX4M2A3000C18 16GB
Report a bug
×
Bug description
Source link