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Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB

Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT4G4DFS824A.C8FE 4GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    43 left arrow 72
    Around 40% lower latency
  • Faster write speed, GB/s
    9.6 left arrow 8.1
    Average value in the tests
Crucial Technology CT4G4DFS824A.C8FE 4GB Reasons to consider
Crucial Technology CT4G4DFS824A.C8FE 4GB
Report a bug
  • Faster reading speed, GB/s
    15.6 left arrow 14.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 72
  • Read speed, GB/s
    14.9 left arrow 15.6
  • Write speed, GB/s
    9.6 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 1728

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Crucial Technology CT4G4DFS824A.C8FE 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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