RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CT16G4SFS8266.C8FE 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Crucial Technology CT16G4SFS8266.C8FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.7
Average value in the tests
Faster write speed, GB/s
2,123.3
12.7
Average value in the tests
Reasons to consider
Crucial Technology CT16G4SFS8266.C8FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
59
Around -59% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
37
Read speed, GB/s
4,833.8
15.7
Write speed, GB/s
2,123.3
12.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
2971
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology CT16G4SFS8266.C8FE 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
Kingston XF875V-HYA 8GB
Kingston 9965525-018.A00LF 4GB
Hewlett-Packard 7EH98AA#ABB 8GB
G Skill Intl F4-3200C16-32GTZR 32GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M471B5673FH0-CF8 2GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology GD2.111881.002 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston X2YH1K-MIE 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M2B3466C16 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
DSL Memory D4SS12082SH21A-A 8GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Strontium EVMT8G1600U86S 8GB
Transcend Information JM2400HSB-8G 8GB
Report a bug
×
Bug description
Source link