Samsung M3 78T2863EHS-CF7 1GB vs Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Overall score

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB

Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB

Faster reading speed, GB/s

4 17.2

Average value in the tests
Faster write speed, GB/s

2,123.3 13.4

Average value in the tests

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Reasons to consider
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Below the latency in the PassMark tests, ns

30 59

Around -97% lower latency
Higher memory bandwidth, mbps

21300 6400

Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T2863EHS-CF7 1GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

59 30
Read speed, GB/s

4,833.8 17.2
Write speed, GB/s

2,123.3 13.4
Memory bandwidth, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

731 3238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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