RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
Hewlett-Packard 7EH98AA#ABB 8GB
Compare
Samsung M3 78T2863QZS-CF7 1GB vs Hewlett-Packard 7EH98AA#ABB 8GB
Overall score
Samsung M3 78T2863QZS-CF7 1GB
Overall score
Hewlett-Packard 7EH98AA#ABB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
69
103
Around 33% lower latency
Faster reading speed, GB/s
4
13.9
Average value in the tests
Reasons to consider
Hewlett-Packard 7EH98AA#ABB 8GB
Report a bug
Faster write speed, GB/s
7.8
1,857.7
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Hewlett-Packard 7EH98AA#ABB 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
103
Read speed, GB/s
4,217.2
13.9
Write speed, GB/s
1,857.7
7.8
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
668
1520
Samsung M3 78T2863QZS-CF7 1GB RAM comparisons
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
Hewlett-Packard 7EH98AA#ABB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston 9905458-017.A01LF 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CM4X8GE3000C15K4 8GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-2400C16-8GIS 8GB
Kllisre KRE-D3U1600M/8G 8GB
G Skill Intl F4-2400C16-8GRS 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston 9905469-136.A00LF 4GB
Kingston KNWMX1-ETB 4GB
Kingston 99U5471-030.A00LF 8GB
Kingston KF2666C16D4/8G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X16GC3000C16K4D 16GB
Samsung M378B5773DH0-CH9 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3600C14-16GTRS 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology GD2.2229BH.001 16GB
Report a bug
×
Bug description
Source link