Samsung M3 78T2953EZ3-CF7 1GB vs Corsair CMD16GX4M4B2133C10 4GB

Overall score

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Overall score

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

Differences Specifications Comments

Differences

Samsung M3 78T2953EZ3-CF7 1GB

Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB

Faster reading speed, GB/s

4 15.8

Average value in the tests

Corsair CMD16GX4M4B2133C10 4GB

Reasons to consider
Corsair CMD16GX4M4B2133C10 4GB

Below the latency in the PassMark tests, ns

24 58

Around -142% lower latency
Faster write speed, GB/s

11.7 1,950.7

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD16GX4M4B2133C10 4GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

58 24
Read speed, GB/s

4,241.0 15.8
Write speed, GB/s

1,950.7 11.7
Memory bandwidth, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

651 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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