RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMU32GX4M4D3000C16 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMU32GX4M4D3000C16 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Corsair CMU32GX4M4D3000C16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Below the latency in the PassMark tests, ns
46
94
Around 51% lower latency
Faster reading speed, GB/s
2
11.1
Average value in the tests
Reasons to consider
Corsair CMU32GX4M4D3000C16 8GB
Report a bug
Faster write speed, GB/s
8.8
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMU32GX4M4D3000C16 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
94
Read speed, GB/s
2,909.8
11.1
Write speed, GB/s
1,519.2
8.8
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
1699
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Corsair CMU32GX4M4D3000C16 8GB RAM comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3000C16-16GSXKB 16GB
Kingston 9905316-106.A02LF 1GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C16-32GTZR 32GB
Samsung M395T2863QZ4-CF76 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
A-DATA Technology DDR4 2400 16GB
Kingston 9905678-005.A00G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HP26D4S9S1ME-4 4GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C15-4GVK 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KYXC0V-MIB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFS832A.C8FE 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Apacer Technology GD2.1542WS.003 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C15-4GVRB 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Samsung M393B2G70BH0-CK0 16GB
Kingston ACR26D4S9S8MH-8 8GB
Report a bug
×
Bug description
Source link