RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4DFD8213.C16FH1 16GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
14.8
Average value in the tests
Reasons to consider
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
46
Around -44% lower latency
Faster write speed, GB/s
8.2
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
32
Read speed, GB/s
2,909.8
14.8
Write speed, GB/s
1,519.2
8.2
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2533
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-515.A00LF 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Samsung M393B2G70BH0-CK0 16GB
Golden Empire CL14-16-16 D4-2400 16GB
Samsung M393B1K70CH0-YH9 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
G Skill Intl F3-2800C12-8GTXDG 8GB
Samsung M471A1K43BB1-CRC 8GB
Kingston 9905403-515.A00LF 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston X2YH1K-MIE 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Kingston 9905403-447.A00LF 4GB
Golden Empire CL18-20-20 D4-3600 8GB
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-2133C15-16GIS 16GB
Crucial Technology CT102464BD160B.M16 8GB
Corsair CMSX16GX4M1A2400C16 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Report a bug
×
Bug description
Source link