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Samsung M3 78T5663EH3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Samsung M3 78T5663EH3-CF7 2GB vs Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Overall score
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Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663EH3-CF7 2GB Reasons to consider
Samsung M3 78T5663EH3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    2,451.8 left arrow 10.6
    Average value in the tests
Patriot Memory (PDP Systems) 2400 C16 Series 16GB Reasons to consider
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 65
    Around -110% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663EH3-CF7 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 31
  • Read speed, GB/s
    4,605.9 left arrow 15.6
  • Write speed, GB/s
    2,451.8 left arrow 10.6
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    878 left arrow 2837

Samsung M3 78T5663EH3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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