RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Compare
Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology CT16G4DFD8266.M16FH 16GB
Overall score
Samsung M3 78T5663RZ3-CF7 2GB
Overall score
Crucial Technology CT16G4DFD8266.M16FH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
17
Average value in the tests
Faster write speed, GB/s
2,784.6
13.7
Average value in the tests
Reasons to consider
Crucial Technology CT16G4DFD8266.M16FH 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
65
Around -171% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
24
Read speed, GB/s
4,806.8
17.0
Write speed, GB/s
2,784.6
13.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
932
3230
Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Kingston 99U5471-020.A00LF 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Kingston 99U5469-045.A00LF 4GB
Samsung M471A1K1KCB1-CRC 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9905625-066.A00G 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9905403-515.A00LF 8GB
Panram International Corporation W4N2666PS-8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK8GX4M2A2133C13 4GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Samsung M4 70T5663CZ3-CE6 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
Kingston 9905403-011.A03LF 2GB
Corsair CMU32GX4M4C3400C16 8GB
Kingston 99U5471-012.A00LF 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905625-066.A00G 16GB
Report a bug
×
Bug description
Source link