RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-2666C19-8GVK 8GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-2666C19-8GVK 8GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
G Skill Intl F4-2666C19-8GVK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
39
Around 15% lower latency
Faster reading speed, GB/s
17.6
15.3
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
G Skill Intl F4-2666C19-8GVK 8GB
Report a bug
Faster write speed, GB/s
12.1
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-2666C19-8GVK 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
39
Read speed, GB/s
17.6
15.3
Write speed, GB/s
12.0
12.1
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2910
2760
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-2666C19-8GVK 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Samsung M393B1K70CH0-YH9 8GB
Transcend Information JM2666HLG-16GK 8GB
Samsung M391B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2800C15-8GVR 8GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
Kingston KHX1866C9D3/8GX 8GB
Corsair CMK16GX4M2E3200C16 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Mushkin 991586 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Report a bug
×
Bug description
Source link