Samsung M378B1G73EB0-CK0 8GB vs Micron Technology 9ASF1G72PZ-2G3B1 8GB

Overall score

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Overall score

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Differences Specifications Comments

Differences

Samsung M378B1G73EB0-CK0 8GB

Reasons to consider
Samsung M378B1G73EB0-CK0 8GB

Below the latency in the PassMark tests, ns

41 58

Around 29% lower latency
Faster reading speed, GB/s

13.3 9.7

Average value in the tests
Faster write speed, GB/s

8.5 7.5

Average value in the tests

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Reasons to consider
Micron Technology 9ASF1G72PZ-2G3B1 8GB

Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B1G73EB0-CK0 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

41 58
Read speed, GB/s

13.3 9.7
Write speed, GB/s

8.5 7.5
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2322 2172

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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