RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around -8% lower latency
Faster reading speed, GB/s
23.1
12.7
Average value in the tests
Faster write speed, GB/s
19.0
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
26
Read speed, GB/s
12.7
23.1
Write speed, GB/s
7.5
19.0
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
4276
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905678-105.A00G 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9965604-016.C01G 8GB
Samsung M471B5173CB0-YK0 4GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
Kingston KF2666C16S4/16G 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK64GX4M2A2400C16 32GB
Samsung M378A1K43EB2-CWE 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Kingston 99U5403-492.A00LF 8GB
Samsung M471A5644EB0-CPB 2GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Samsung M386B4G70DM0-CMA4 32GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston HP26D4S9S8MD-8 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Report a bug
×
Bug description
Source link