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Samsung M378B5673EH1-CF8 2GB
Panram International Corporation W4U2666PS-8GC19 8GB

Samsung M378B5673EH1-CF8 2GB vs Panram International Corporation W4U2666PS-8GC19 8GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Panram International Corporation W4U2666PS-8GC19 8GB Reasons to consider
Panram International Corporation W4U2666PS-8GC19 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 28
    Around -27% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 8500
    Around 2.51 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation W4U2666PS-8GC19 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 22
  • Read speed, GB/s
    12.7 left arrow 16.1
  • Write speed, GB/s
    7.5 left arrow 8.7
  • Memory bandwidth, mbps
    8500 left arrow 21300
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 2633

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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Panram International Corporation W4U2666PS-8GC19 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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