Samsung M378T5663QZ3-CF7 2GB vs Micron Technology AFSD416ES1P 16GB

Overall score

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB

Reasons to consider
Samsung M378T5663QZ3-CF7 2GB

Faster reading speed, GB/s

4 14.5

Average value in the tests

Micron Technology AFSD416ES1P 16GB

Reasons to consider
Micron Technology AFSD416ES1P 16GB

Below the latency in the PassMark tests, ns

25 56

Around -124% lower latency
Faster write speed, GB/s

10.7 1,813.5

Average value in the tests
Higher memory bandwidth, mbps

19200 6400

Around 3 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378T5663QZ3-CF7 2GB

Micron Technology AFSD416ES1P 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

56 25
Read speed, GB/s

4,387.7 14.5
Write speed, GB/s

1,813.5 10.7
Memory bandwidth, mbps

6400 19200

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

693 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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