RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology BLS4G4D240FSA.8FAR 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
26
Around -4% lower latency
Faster reading speed, GB/s
15.7
12.8
Average value in the tests
Faster write speed, GB/s
11.6
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
25
Read speed, GB/s
12.8
15.7
Write speed, GB/s
9.0
11.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2756
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KF552C40-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston XW21KG-MIE2 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-16GTZKW 16GB
Kingston 9905316-106.A02LF 1GB
Corsair CMU16GX4M2D3000C16 8GB
PUSKILL DDR3 1600 8G 8GB
Essencore Limited KD48GS88A-26N1600 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK16GX4M2L3000C15 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK32GX4M4Z2933C16 8GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905703-011.A00G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Report a bug
×
Bug description
Source link