RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C15-16GFXR 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2400C15-16GFXR 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
G Skill Intl F4-2400C15-16GFXR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
G Skill Intl F4-2400C15-16GFXR 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
26
Around -18% lower latency
Faster reading speed, GB/s
18.4
12.8
Average value in the tests
Faster write speed, GB/s
13.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C15-16GFXR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
22
Read speed, GB/s
12.8
18.4
Write speed, GB/s
9.0
13.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
3286
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
G Skill Intl F4-2400C15-16GFXR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C16-8GVK 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin 99[2/7/4]197F 8GB
Kingston KVR533D2N4 512MB
Samsung M378A1K43DB2-CVF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M2C3466C16 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Asgard VML41UG-MIC1U22T1 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Samsung M393B5270CH0-CH9 4GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston KTP9W1-MIE 16GB
Kingston 9905403-038.A00LF 4GB
Corsair CM4X32GE2666C18S2 32GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
Samsung M471B1G73DB0-YK0 8GB
Essencore Limited KD48GU880-32N220T 8GB
Samsung M378A1G44BB0-CWE 8GB
Kingston KV0M5R-MIE 8GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology GD2.2229BH.001 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMD32GX4M4C3200C14T 8GB
Report a bug
×
Bug description
Source link