RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around 7% lower latency
Reasons to consider
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Report a bug
Faster reading speed, GB/s
18.8
12.8
Average value in the tests
Faster write speed, GB/s
15.3
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
28
Read speed, GB/s
12.8
18.8
Write speed, GB/s
9.0
15.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
3637
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Corsair CMD16GX3M2A1600C7 8GB
G Skill Intl F4-2400C15-8GVB 8GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston MSI24D4S7D8MB-8 8GB
Corsair CML8GX3M2A1600C9 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Samsung M393B1G70BH0-YK0 8GB
Good Wealth Technology Ltd. 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
G Skill Intl F3-2400C11-8GSR 8GB
UMAX Technology 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 99U5712-009.A00G 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMK16GX4M2A2666C16 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT32G4SFD8266.C16FE 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KHX2666C16/16G 16GB
Report a bug
×
Bug description
Source link