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Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Samsung M391B5673EH1-CH9 2GB vs Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Overall score
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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 27
    Around 4% lower latency
Patriot Memory (PDP Systems) 3400 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Report a bug
  • Faster reading speed, GB/s
    18.2 left arrow 12.8
    Average value in the tests
  • Faster write speed, GB/s
    15.3 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 27
  • Read speed, GB/s
    12.8 left arrow 18.2
  • Write speed, GB/s
    9.0 left arrow 15.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 3628

Samsung M391B5673EH1-CH9 2GB RAM comparisons

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB RAM comparisons

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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