RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
31
Around 16% lower latency
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Report a bug
Faster reading speed, GB/s
18
12.8
Average value in the tests
Faster write speed, GB/s
16.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
31
Read speed, GB/s
12.8
18.0
Write speed, GB/s
9.0
16.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3729
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4000C17-16GVKB 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
AMD AE34G1601U1 4GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMSO4GX4M1A2133C15 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMK64GX4M8B3200C16 8GB
Kingston KVR16N11/8-SP 8GB
JUHOR JHD2666U1908JG 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1K43CB1-CRC 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2133C15-8GNT 8GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Report a bug
×
Bug description
Source link