RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673FH0-CH9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Compare
Samsung M391B5673FH0-CH9 2GB vs Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Overall score
Samsung M391B5673FH0-CH9 2GB
Overall score
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673FH0-CH9 2GB
Report a bug
Reasons to consider
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around -12% lower latency
Faster reading speed, GB/s
14.5
13.3
Average value in the tests
Faster write speed, GB/s
9.1
8.5
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673FH0-CH9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
25
Read speed, GB/s
13.3
14.5
Write speed, GB/s
8.5
9.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2213
2368
Samsung M391B5673FH0-CH9 2GB RAM comparisons
Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3400C16-8GSXW 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9965690-002.A00G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK8GX4M1D2400C14 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3466C16-16GTZSW 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kllisre 99P54280002.A00LF 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M4B3200C15 4GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Report a bug
×
Bug description
Source link