RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Apacer Technology 78.C1GMM.AUC0B 8GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Apacer Technology 78.C1GMM.AUC0B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Faster write speed, GB/s
8.1
6.9
Average value in the tests
Reasons to consider
Apacer Technology 78.C1GMM.AUC0B 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
49
Around -113% lower latency
Faster reading speed, GB/s
14.7
10.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
23
Read speed, GB/s
10.2
14.7
Write speed, GB/s
8.1
6.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2465
2190
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB RAM comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMK64GX4M4K3733C17 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-2133C15-4GVR 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD42133C138G4NJK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CB8GS2400.C8ET 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-2800C16-4GVR 4GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Kingston K1N7HK-ELC 2GB
Transcend Information JM2666HLB-16G 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A2G43BB2-CWE 16GB
Kingston 99P5474-014.A00LF 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
Report a bug
×
Bug description
Source link