RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
67
Around 27% lower latency
Reasons to consider
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Report a bug
Faster reading speed, GB/s
15.9
10.2
Average value in the tests
Faster write speed, GB/s
8.4
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
67
Read speed, GB/s
10.2
15.9
Write speed, GB/s
8.1
8.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2465
1895
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3000C16-8GTRS 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMT16GX4M2C3000C15 8GB
Samsung M3 78T5663RZ3-CE6 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Kingston 99U5471-052.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Report a bug
×
Bug description
Source link