RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CH9 16GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Compare
Samsung M393B2G70BH0-CH9 16GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Overall score
Samsung M393B2G70BH0-CH9 16GB
Overall score
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CH9 16GB
Report a bug
Reasons to consider
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Report a bug
Faster reading speed, GB/s
19.4
8
Average value in the tests
Faster write speed, GB/s
15.7
7.3
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CH9 16GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
33
33
Read speed, GB/s
8.0
19.4
Write speed, GB/s
7.3
15.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1911
3564
Samsung M393B2G70BH0-CH9 16GB RAM comparisons
Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMR16GX4M2A2666C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS824A.C8FE 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3466C16-8GVK 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Kingston KF552C40-16 16GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
DSL Memory D4SS12082SH21A-A 8GB
Kingston HP669238-071-HYC 4GB
Corsair CMK16GX4M4A2133C13 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston KHX2666C13D4/8GX 8GB
Corsair CMD8GX3M2A2933C12 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK32GX4M4A2800C16 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C16-32GTZN 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Report a bug
×
Bug description
Source link