RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
54
Around -86% lower latency
Faster reading speed, GB/s
16.9
9.2
Average value in the tests
Faster write speed, GB/s
12.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
29
Read speed, GB/s
9.2
16.9
Write speed, GB/s
8.1
12.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2105
2725
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905702-082.A00G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-2800C15-16GRKD 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3733C17-8GTZKW 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3866C18-4GVK 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Apacer Technology 78.D2GF2.4010B 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston KC5N22-MIE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Crucial Technology CT102464BD160B.M16 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston 99U5429-007.A00LF 2GB
Kingston KHX4266C19D4/8GX 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR24D4S7D8MB-16 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Report a bug
×
Bug description
Source link