RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3200C14-8GTZSW 8GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
G Skill Intl F4-3200C14-8GTZSW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-8GTZSW 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
54
Around -69% lower latency
Faster reading speed, GB/s
15.6
9.2
Average value in the tests
Faster write speed, GB/s
13.2
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
32
Read speed, GB/s
9.2
15.6
Write speed, GB/s
8.1
13.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2105
3000
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
G Skill Intl F4-3200C14-8GTZSW 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CB8GS2400.C8JT 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Kingston KVR16N11/8-SP 8GB
Corsair CMU16GX4M2D3200C16 8GB
Kingston 9905403-447.A00LF 4GB
Apacer Technology D12.2755BS.001 16GB
Kingston 99U5584-004.A00LF 4GB
Apacer Technology GD2.1527WC.001 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C14-8GVKA 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK128GX4M8B3333C16 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston ASU21D4U5S8MB-8 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C16-8GVK 8GB
Report a bug
×
Bug description
Source link