Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 8ATF1G64AZ-2G6H1 8GB

Overall score
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Differences

  • Below the latency in the PassMark tests, ns
    34 left arrow 54
    Around -59% lower latency
  • Faster reading speed, GB/s
    16.2 left arrow 9.2
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 34
  • Read speed, GB/s
    9.2 left arrow 16.2
  • Write speed, GB/s
    8.1 left arrow 13.1
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2105 left arrow 3020
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons