RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
54
Around -86% lower latency
Faster reading speed, GB/s
15.8
9.2
Average value in the tests
Faster write speed, GB/s
11.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
29
Read speed, GB/s
9.2
15.8
Write speed, GB/s
8.1
11.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2105
2711
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Samsung M393B1K70CH0-CH9 8GB
DSL Memory D4SS1G081SH24A-A 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMG64GX4M2D3600C18 32GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology GD2.22428S.001 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Corsair CMT16GX4M2K4000C19 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905700-011.A00G 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Report a bug
×
Bug description
Source link