RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
54
Around -80% lower latency
Faster reading speed, GB/s
15.9
9.2
Average value in the tests
Faster write speed, GB/s
10.7
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
30
Read speed, GB/s
9.2
15.9
Write speed, GB/s
8.1
10.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2105
2846
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Samsung DDR3 8GB 1600MHz 8GB
Avant Technology J642GU42J5213N4 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Essencore Limited KD4AGSA8A-32N2200 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Corsair CM3X8GA2400C11Y2R 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M378A1K43BB1-CRC 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology DOVF1B163G2G 2GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Kingston KHX1600C9D3/8G 8GB
Kingston KCRXJ6-MIE 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL14-16-16 D4-3000 4GB
Report a bug
×
Bug description
Source link