RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-YK0 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Compare
Samsung M393B2G70BH0-YK0 16GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Overall score
Samsung M393B2G70BH0-YK0 16GB
Overall score
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-YK0 16GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
63
Around -110% lower latency
Faster reading speed, GB/s
15.9
8.1
Average value in the tests
Faster write speed, GB/s
10.7
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-YK0 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
63
30
Read speed, GB/s
8.1
15.9
Write speed, GB/s
7.5
10.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1945
2846
Samsung M393B2G70BH0-YK0 16GB RAM comparisons
Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK32GX4M4B3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR32GX4M4C3466C16 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905665-009.A00G 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
Kingston 9905403-515.A00LF 8GB
Kingston 9905700-012.A00G 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Crucial Technology CB8GS2400.C8ET 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology J642GU42J9266N4 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK32GX4M2B3200C16 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-4GVK 4GB
Kingston 9905403-447.A00LF 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston X2YH1K-MIE 16GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Report a bug
×
Bug description
Source link