RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
27
Around -50% lower latency
Faster reading speed, GB/s
20.4
11.8
Average value in the tests
Faster write speed, GB/s
18.1
7.3
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
18
Read speed, GB/s
11.8
20.4
Write speed, GB/s
7.3
18.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2057
3529
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CB8GU2400.C8D 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Samsung M393B5270CH0-CH9 4GB
Golden Empire CL15-15-15 D4-3000 8GB
Kingston 99U5474-010.A00LF 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Asgard VML41UG-MIC1U22T1 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMT32GX4M4K3600C16 8GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
Samsung M471A5143SB1-CRC 4GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Samsung M471B5673FH0-CF8 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2133C15-4GRS 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Kingston 9905469-143.A00LF 4GB
Kingston MSI21D4S15HAG/8G 8GB
Report a bug
×
Bug description
Source link