RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
EVGA 16G-D4-2400-MR 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs EVGA 16G-D4-2400-MR 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
EVGA 16G-D4-2400-MR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
EVGA 16G-D4-2400-MR 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
42
Around -40% lower latency
Faster reading speed, GB/s
17.9
10.6
Average value in the tests
Faster write speed, GB/s
13.3
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
EVGA 16G-D4-2400-MR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
30
Read speed, GB/s
10.6
17.9
Write speed, GB/s
9.0
13.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
3226
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
EVGA 16G-D4-2400-MR 8GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C16-16GVRB 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston 9965589-017.D00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston HP26D4U6S8ME-8X 8GB
AMD R5S38G1601U2S 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C15-8GVK 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston LV26D4S9S8HJ-8 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965643-006.A01G 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905734-018.A00G 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905663-007.A00G 16GB
Avant Technology F6451U64F9333G 4GB
Kingston ACR21D4S15HAG/8G 8GB
Report a bug
×
Bug description
Source link