RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
42
Around -17% lower latency
Faster reading speed, GB/s
18.5
10.6
Average value in the tests
Faster write speed, GB/s
15.4
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
36
Read speed, GB/s
10.6
18.5
Write speed, GB/s
9.0
15.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2423
3426
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2666C16-8GRB 8GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
SK Hynix HYMP112U64CP8-S6 1GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
Corsair VS2GB1333D4 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Samsung 1600 CL10 Series 8GB
Transcend Information JM2666HSE-16G 16GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471A1K1KCB1-CRC 8GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMK32GX4M4B3200C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Kingston 9905403-090.A01LF 4GB
Shenzhen Xingmem Technology Corp 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston KHX2133C13D4/4GX 4GB
Report a bug
×
Bug description
Source link