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Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

Overall score
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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.1
    Average value in the tests
Micron Technology 4ATF1G64HZ-3G2B2 8GB Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 73
    Around -87% lower latency
  • Faster write speed, GB/s
    11.9 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 39
  • Read speed, GB/s
    3,510.5 left arrow 16.1
  • Write speed, GB/s
    1,423.3 left arrow 11.9
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 2782

Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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