Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB

Samsung M471A5244CB0-CWE 4GB vs A-DATA Technology AO1P24HC4N2-BYNS 4GB

Overall score
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Overall score
star star star star star
A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

Differences

  • Below the latency in the PassMark tests, ns
    38 left arrow 48
    Around 21% lower latency
  • Faster reading speed, GB/s
    15.5 left arrow 14.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33% higher bandwidth
  • Faster write speed, GB/s
    12.1 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 48
  • Read speed, GB/s
    15.5 left arrow 14.4
  • Write speed, GB/s
    12.0 left arrow 12.1
  • Memory bandwidth, mbps
    25600 left arrow 19200
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2283 left arrow 2080
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons