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Samsung M471A5244CB0-CWE 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
38
Around -41% lower latency
Faster reading speed, GB/s
18.7
15.5
Average value in the tests
Faster write speed, GB/s
17.8
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
27
Read speed, GB/s
15.5
18.7
Write speed, GB/s
12.0
17.8
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2283
3963
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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