RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Samsung M378A2K43CB1-CTD 16GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Samsung M378A2K43CB1-CTD 16GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Samsung M378A2K43CB1-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Samsung M378A2K43CB1-CTD 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
45
Around -36% lower latency
Faster reading speed, GB/s
16.2
11.9
Average value in the tests
Faster write speed, GB/s
12.0
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Samsung M378A2K43CB1-CTD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
33
Read speed, GB/s
11.9
16.2
Write speed, GB/s
8.1
12.0
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2077
3116
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Samsung M378A2K43CB1-CTD 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston 9905403-134.A00LF 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Kingston 99U5474-013.A00LF 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C16-16GTZ 16GB
Team Group Inc. UD5-6400 16GB
Transcend Information TS512MLH64V4H 4GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Samsung M471B5173QH0-YK0 4GB
EVGA 16G-D4-2800-MR 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3000C15-4GRK 4GB
A-DATA Technology DQVE1908 512MB
Samsung M386A2G40DB0-CPB 16GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M378A2K43CB1-CTD 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905734-018.A00G 16GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Report a bug
×
Bug description
Source link