RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
45
Around -25% lower latency
Faster reading speed, GB/s
14.8
11.9
Average value in the tests
Faster write speed, GB/s
11.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
36
Read speed, GB/s
11.9
14.8
Write speed, GB/s
8.1
11.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2077
2564
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5316G1609U2K 8GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-16GTZKW 16GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology 78.B1GM3.C7W0B 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905734-063.A00G 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3200C16-4GVRB 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Transcend Information TS1GSH64V1H 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GRS 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C17-8GISM 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C19-16GSXF 16GB
Report a bug
×
Bug description
Source link