RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
45
Around -61% lower latency
Faster reading speed, GB/s
19.1
11.9
Average value in the tests
Faster write speed, GB/s
16.2
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
28
Read speed, GB/s
11.9
19.1
Write speed, GB/s
8.1
16.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2077
3562
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB RAM comparisons
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
Apacer Technology GD2.1527WT.001 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X8GD3000C15K4 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2666C15-16GVK 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK64GX4M4D3600C18 16GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
Corsair CM4X8GE2400C15K4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Tanbassh 8G 2666MHZ 8GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C16-8GVS 8GB
Kingston KHX2133C11D3/4GX 4GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
G Skill Intl F4-3200C16-8GVRB 8GB
A-DATA Technology VDQVE1B16 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
×
Bug description
Source link