RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73QH0-YK0 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Compare
Samsung M471B1G73QH0-YK0 8GB vs Micron Technology M471A1K43CB1-CTD 8GB
Overall score
Samsung M471B1G73QH0-YK0 8GB
Overall score
Micron Technology M471A1K43CB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73QH0-YK0 8GB
Report a bug
Reasons to consider
Micron Technology M471A1K43CB1-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
47
Around -24% lower latency
Faster reading speed, GB/s
14.8
11.8
Average value in the tests
Faster write speed, GB/s
12.6
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73QH0-YK0 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
38
Read speed, GB/s
11.8
14.8
Write speed, GB/s
8.0
12.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2061
2825
Samsung M471B1G73QH0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
Micron Technology M471A1K43CB1-CTD 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT451U7BFR8C-RD 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M393B5270CH0-CH9 4GB
EVGA 8GX-D4-3200-MR 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Elpida EBJ40UG8EFU5-GNL-F 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston MSI24D4S7D8MB-8 8GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMW32GX4M2C3466C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Samsung M393B1K70CH0-CH9 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905403-134.A00LF 2GB
Samsung M471A1K1KCB1-CRC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Corsair CMV16GX4M1A2133C15 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2133C15-8GNS 8GB
Report a bug
×
Bug description
Source link