RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS4G4D26BFSB.8FE 4GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
45
Around -73% lower latency
Faster reading speed, GB/s
17.7
12.3
Average value in the tests
Faster write speed, GB/s
14.8
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
26
Read speed, GB/s
12.3
17.7
Write speed, GB/s
8.0
14.8
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1992
3055
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Peak Electronics 256X64M-67E 2GB
Avant Technology J644GU44J2320NF 32GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C15-4GVK 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3600C18-8GVK 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMN32GX4M2Z3600C18 16GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston XRGM6C-MIB 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905712-010.A00G 16GB
SK Hynix DDR2 800 2G 2GB
Kingston ASU21D4U5S1MB-4 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Kingston ASU16D3LS1KFG/4G 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
Kingston K531R8-MIN 4GB
KingSpec KingSpec 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston KMKYF9-MID 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Report a bug
×
Bug description
Source link