RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Kingston KHX21334D4/8G 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Kingston KHX21334D4/8G 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Kingston KHX21334D4/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Faster reading speed, GB/s
12.3
11.2
Average value in the tests
Faster write speed, GB/s
8.0
6.2
Average value in the tests
Reasons to consider
Kingston KHX21334D4/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
45
Around -50% lower latency
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Kingston KHX21334D4/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
30
Read speed, GB/s
12.3
11.2
Write speed, GB/s
8.0
6.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1992
1914
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Kingston KHX21334D4/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965516-112.A00LF 16GB
Kingston 9905702-184.A00G 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Kingston 9905403-447.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-32GTZN 32GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Kingston KHX1600C9D3/4G 4GB
Samsung M378A2K43DB1-CTD 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Kingston 9905403-447.A00LF 4GB
Kingston KHX2666C15S4/8G 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Samsung M3 93T5750CZA-CE6 2GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Report a bug
×
Bug description
Source link