RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Mushkin MR[ABC]4U360JNNM16G 16GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Mushkin MR[ABC]4U360JNNM16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Mushkin MR[ABC]4U360JNNM16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
45
Around -61% lower latency
Faster reading speed, GB/s
16.5
12.3
Average value in the tests
Faster write speed, GB/s
16.5
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
28
Read speed, GB/s
12.3
16.5
Write speed, GB/s
8.0
16.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1992
3634
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-2400C15-16GIS 16GB
Samsung M471B5173QH0-YK0 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMSO16GX4M2A2133C15 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905599-026.A00G 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A1K1KBB1-CRC 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2800C15-8GVRB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X16GE2400C16S4 16GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3600C18-32GVK 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Report a bug
×
Bug description
Source link