RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
48
Around -92% lower latency
Faster reading speed, GB/s
13.7
8.9
Average value in the tests
Faster write speed, GB/s
8.0
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
25
Read speed, GB/s
8.9
13.7
Write speed, GB/s
5.9
8.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1420
2290
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
Kingston 9905678-007.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[A/B]4U280HHHH8G 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 99P5474-055.A00LF 4GB
Elpida EBE21UE8ACUA-8G-E 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905744-067.A00G 32GB
Samsung M471B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK32GX4M4B3733C17 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Report a bug
×
Bug description
Source link