RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Compare
Samsung M471B5273EB0-CK0 4GB vs Crucial Technology BL8G32C16U4BL.8FE 8GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
Crucial Technology BL8G32C16U4BL.8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Reasons to consider
Crucial Technology BL8G32C16U4BL.8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
40
Around -29% lower latency
Faster reading speed, GB/s
20
12.3
Average value in the tests
Faster write speed, GB/s
15.1
8.9
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
31
Read speed, GB/s
12.3
20.0
Write speed, GB/s
8.9
15.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1789
3425
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB RAM comparisons
Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905469-143.A00LF 4GB
Transcend Information JM3200HLE-32GK 16GB
Kingston 9905471-006.A00LF 4GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965669-018.A00G 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMT16GX4M2K4266C19 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
Kingston 9905471-071.A00LF 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Corsair CMX4GX3M2A1600C9 2GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Kingston 9905403-134.A00LF 2GB
SK Hynix HMA82GR7AFR8N-VK 16GB
Report a bug
×
Bug description
Source link