RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Compare
Samsung M471B5273EB0-CK0 4GB vs V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
40
48
Around 17% lower latency
Reasons to consider
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Report a bug
Faster reading speed, GB/s
17
12.3
Average value in the tests
Faster write speed, GB/s
10.4
8.9
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
48
Read speed, GB/s
12.3
17.0
Write speed, GB/s
8.9
10.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1789
2366
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston KHX2400C14S4/16G 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3200C15-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4SFD824A.C16FE 16GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
SK Hynix DDR2 800 2G 2GB
Samsung M393A5143DB0-CPB 4GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-2133C15-4GRR 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Samsung M471A5143SB1-CRC 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Kingston 9905471-006.A01LF 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Kingston 9965525-018.A00LF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Report a bug
×
Bug description
Source link