SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

SK Hynix DDR2 800 2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Overall score
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Differences

  • Faster reading speed, GB/s
    2 left arrow 15.6
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    27 left arrow 77
    Around -185% lower latency
  • Faster write speed, GB/s
    11.3 left arrow 1,884.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 27
  • Read speed, GB/s
    2,936.9 left arrow 15.6
  • Write speed, GB/s
    1,884.0 left arrow 11.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    564 left arrow 2687
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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